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Researchers at Saint Petersburg Electrotechnical University (LETI) have introduced a groundbreaking method using Fourier Transform Infrared Reflection Anisotropy Spectroscopy (FT-IR RAS) to analyze semiconductor materials. This innovative approach provides valuable insights into semiconductor surfaces, offering enhanced sensitivity and accuracy in characterizing anisotropic materials, surface phenomena, and thin film structures. The new method extends the spectral range into the mid-infrared, revolutionizing semiconductor surface analysis. This technique opens new avenues for fundamental research and technological advancements in materials science and technology.
